triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 1 27- 32 ghz 0.7 watt power amplifier TGA1073B-SCC key features and performance ? 0.25 um phemt technology ? 25 db nominal gain @ 28 ghz ? 28.5 dbm nominal pout @ p1db (7v) ? -38 dbc imr3 @ 18 dbm scl ? bias 6 - 8 v @ 420 ma ? chip dimensions 3.12mm x 2.15mm primary applications ? point-to-point radio ? point-to-multipoi nt communications -25 -20 -15 -10 -5 0 5 10 15 20 25 30 25 26 27 28 29 30 31 32 33 34 35 frequency (ghz) s21 s11 s22 26.0 26.5 27.0 27.5 28.0 28.5 29.0 29.5 30.0 28.0 29.0 30.0 31.0 32.0 frequency (ghz) vd = +6v, +7v, +8v idq = 420ma the triquint TGA1073B-SCC is a three stage hpa mmic design using triquint?s proven 0.25 um power phemt process. the tga1073b is designed to support a variety of millimeter wave applications including point-to-point digital radio and lmds/lmcs and ka band satellite ground terminals. the three stage design consists of a 2 x 300um input stage driving a 2 x 600um interstage followed by a 4 x 600um output stage. the tga1073b provides 28.5 dbm nominal output power at 1db compression across 27-32ghz. typical small signal gain is 25 db at 28ghz and 18db at 32ghz. the tga1073b requires minimum off-chip components. each device is 100% dc and rf tested on-wafer to ensure performance compliance. the device is available in chip form. january 17, 2005 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 2 TGA1073B-SCC maximum ratings symbol parameter 4/ value notes v + positive supply voltage 11v i + positive supply current 630 ma 1/ i - negative gate current 35.2 ma p in input continuous wave power 23 dbm p d power dissipation 6.93 w t ch operating channel temperature 150 0 c2/ 3 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ total current for all stages. 2/ these ratings apply to each individual fet. 3/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lo west possible levels. 4/ these ratings represent the maximum operable values for the device. dc specifications (100%) (t a = 25 c + 5 c) notes symbol test conditions 2/ limits units min max i dss1,2 std 60 282 ma g m1,2 std 132 318 ms 1/ |v p1,2 |std 0.5 1.5 v 1/ |v p3 |std 0.5 1.5 v 1/ |v p4 |std 0.5 1.5 v 1/ |v p5,6 |std 0.5 1.5 v 1/ |v p7,8 |std 0.5 1.5 v 1/ |v bvgd1-8 |std 11 30 v 1/ |v bvgs1,2 |std 11 30 v 1/ v p , v bvgd , and v bvgs are negative. 2/ the measurement conditions are subject to change at the manufacture?s discretion (with appropriate notification to the buyer). www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 3 TGA1073B-SCC rf specifications (t a = 25 c + 5 c) note test measurement conditions value units 6v @ 420ma min typ max 27 ? 30 ghz 20 25 db 1/ small-signal gain magnitude 31 ? 32 ghz 16 20 db power output at 1 db gain compression 27 ? 32 ghz 26.5 28.5 dbm 1/ input return loss magnitude 27 ? 32 ghz -10 db 1/ output return loss magnitude 27 ? 32 ghz -10 db 2/ output third order intercept 37 dbm 1/ rf probe data is taken at 1 ghz steps. 2/ minimum output third-order-intercept (otoi) is generally 6db minimum above the 1db compression point (p1db). calculations are based on standard two-tone testing with each tone approximately 10db below the nominal p1db. factors that may affect otoi performance include device bias, measurement frequency, operating temperature, output interface and output power level for each tone. reliability data parameter bias conditions p diss r jc t ch t m v d (v) i d (ma) (w) (c/w) ( c) (hrs) r jc thermal resistance (channel to backside of c/p) 6 420 2.52 22.58 126.9 8.0 e6 note: assumes eutectic attach using 1.5 mil thick 80/20 ausn mounted to a 20mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 4 tga1073b average performance sam ple size = 11499 devices 2 6 10 14 18 22 26 30 34 26 27 28 29 30 31 32 33 34 frequency (ghz) gain (db) -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 26 27 28 29 30 31 32 33 34 frequency (ghz) input return loss (db) -4 0 -3 6 -3 2 -2 8 -2 4 -2 0 -1 6 -1 2 -8 -4 0 frequency (ghz) output return loss (db ) www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 5 mechanical characteristics TGA1073B-SCC www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 6 chip assembly an d bonding diagram recommended: solder mmic to carrier using ausn 80/20 bond mmic rf in and rf out with 5mil au ribbon ribbon should be as short as possible bond dc lines as show n with 1 mil bondwires 0.01uf 0.01uf 100pf 100pf TGA1073B-SCC vg vd rf in rf out www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet 7 reflow process assembly notes: ? ausn (80/20) solder with limited exposure to temperatures at or above 300 c ? alloy station or conveyor furnace with reducing atmosphere ? no fluxes should be utilized ? coefficient of thermal expansion matchi ng is critical for long-term reliability ? storage in dry nitrogen atmosphere component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets preferred method of pick up ? avoidance of air bridges during placement ? force impact critical during auto placement ? organic attachment can be used in low-power applications ? curing should be done in a convection oven ; proper exhaust is a safety concern ? microwave or radiant curing should not be used because of differential heating ? coefficient of thermal expansion matching is critical interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique ? force, time, and ultrasonics are critical parameters ? aluminum wire should not be used ? discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire ? maximum stage temperature: 200 c gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA1073B-SCC www.datasheet.net/ datasheet pdf - http://www..co.kr/
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